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TC58FVT641

Toshiba Semiconductor
Part Number TC58FVT641
Manufacturer Toshiba Semiconductor
Description (TC58Fxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Published Nov 17, 2005
Detailed Description TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT (8M × 8 BITS / 4M × 16 BIT...
Datasheet PDF File TC58FVT641 PDF File

TC58FVT641
TC58FVT641

Overview
TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT (8M × 8 BITS / 4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.
0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits.
The TC58FVT641/B641 features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors.
The commands are based on the JEDEC standard.
The Program and Erase operations are automatically executed in the chip.
The TC58FVT641/B641 also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.
FEATURES • • • • Power supply voltage VDD = 2.
7 V~3.
6 V Operating temperature Ta = −40°C~85°C Organization 8M × 8 bits / 4M × 16 bits Functions Simultaneous Read/Write Auto Program, Auto Erase Fast Program Mode / Acceleration Mode Program Suspend/Resume Erase Suspend/Resume data polling / To...


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