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PM25RLA120

Mitsubishi Electric Semiconductor
Part Number PM25RLA120
Manufacturer Mitsubishi Electric Semiconductor
Description Intelligent Power Module
Published Nov 30, 2005
Detailed Description MITSUBISHI PM25RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM25RLA120 FEATURE a) Adopting new ...
Datasheet PDF File PM25RLA120 PDF File

PM25RLA120
PM25RLA120


Overview
MITSUBISHI PM25RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM25RLA120 FEATURE a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process.
For example, typical Vce(sat)=1.
9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM.
c) Current rating of brake part increased.
60% for the current rating of inverter part.
• 3φ 25A, 1200V Current-sense IGBT type inverter • 15A, 1200V Current-sense regenerative brake IGBT • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices) • Acoustic noise-less 3.
7kW class inverter application APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 120 7 19.
75 3.
25 16 3-2 16 3-2 106 16 3-...



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