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MURP810

Fairchild Semiconductor
Part Number MURP810
Manufacturer Fairchild Semiconductor
Description (MUR8100E / MURP810) 8A / 1000V Ultrafast Diodes
Published Dec 2, 2005
Detailed Description MUR8100E, RURP8100 Data Sheet December 2002 8A, 1000V Ultrafast Diodes The MUR8100E and RUR8100 are ultrafast diodes (t...
Datasheet PDF File MURP810 PDF File

MURP810
MURP810

Overview
MUR8100E, RURP8100 Data Sheet December 2002 8A, 1000V Ultrafast Diodes The MUR8100E and RUR8100 are ultrafast diodes (trr < 75ns) with soft recovery characteristics.
They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
These devices are intended for use as energy steering/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications.
Their low stored charge and ultrafast recovery with soft recovery characteristics minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor.
Formerly developmental type TA09617.
Features • Ultrafast with Soft Recovery .
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<75ns • Operating Temperature .
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175oC • Reverse Voltage .
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1000V • Avalanche Energy Rated • Planar Construction Applications • ...


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