DatasheetsPDF.com

STW16NA40

ST Microelectronics
Part Number STW16NA40
Manufacturer ST Microelectronics
Description N - CHANNEL 400V - 0.21ohm - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS
Published Dec 2, 2005
Detailed Description ® STW16NA40 STH16NA40FI N - CHANNEL 400V - 0.21Ω - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS PRELIMINARY DATA TYPE...
Datasheet PDF File STW16NA40 PDF File

STW16NA40
STW16NA40


Overview
® STW16NA40 STH16NA40FI N - CHANNEL 400V - 0.
21Ω - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STW16NA40 STH16NA40FI s s s s s V DSS 400 V 400V R DS(on) < 0.
3 Ω < 0.
3 Ω ID 16 A 10 A TYPICAL RDS(on) = 0.
21 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION TO-247 3 2 1 3 2 1 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT s ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STW16NA40 VDS V DGR V GS ID ID IDM ( • ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max.
Operating Junction Temperature o o Unit STH16NA40FI 400 400 V V V 10 7 64 70 0.
56 4000 A A A W W/ o C V o o ± 30 16 10 64 180 1.
44  -65 to 150 150 C C (•) Pulse width limited by safe operating area October 1998 1/6 STW16NA40-STH16NA40FI THERMAL DATA TO-247 R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max 0.
69 30 0.
1 300 ISOWATT218 1.
78 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IAR E AS E AR IAR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 50 V) Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) Max Value 16 435 23 10 Unit A mJ mJ A ELECTRICAL CHARACTERISTI...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)