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SD2918

ST Microelectronics
Part Number SD2918
Manufacturer ST Microelectronics
Description RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
Published Dec 3, 2005
Detailed Description ® SD2918 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs ADVANCE DATA s s s s GOLD METALLIZATION EXCELLENT THERMAL ...
Datasheet PDF File SD2918 PDF File

SD2918
SD2918


Overview
® SD2918 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs ADVANCE DATA s s s s GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION Pout = 30 W MIN.
WITH 18 dB GAIN @ 30 MHz DESCRIPTION The SD2918 is a gold metallized N-Channel MOS field-effect RF power transistor.
It is intended for use in 50 V DC large signal applications up to 200 MHz M113 epoxy sealed ORDER CODE BRANDING SD2918 TSD2918 PIN CONNECTION 1.
Drain 2.
Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V (BR)DSS V DGR V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Drain-Gate Voltage (R GS = 1 MΩ ) Gate-Source Voltage Drain Current Power Dissipation Max.
O perating Junction Temperature Storage T emperature Value 125 125 ± 20 6 175 200 -65 to 150 3.
Gate 4.
Source Uni t V V V A W o o C C THERMAL DATA R th (j-c) R th(c -s) Junction-Case Thermal Resistance Case-Heatsink T hermal Resistance ∗ 1.
0 0.
30 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
November 1999 1/8 SD2918 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) g FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 10V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter IDS = 10 mA VDS = 50 V V DS = 0 V ID = 10 mA ID = 2.
5 A ID = 2.
5 A V DS = 50 V V DS = 50 V V DS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz 0.
8 58 35.
5 7.
5 1.
0 Min.
125 1.
0 1 5.
0 5.
0 Typ .
Max.
Un it V mA µA V V mho pF pF pF REF.
1022497C DYNAMIC Symb ol P OUT G PS ηD f = 30MHz f = 30MHz f = 30MHz V DD = 50V V DD = 50V V DD = 50V V DD = 50V Parameter P in = 0.
475 W P out = 30 W P out = 30 W P out = 30 W IDQ = 100 mA IDQ = 100 mA IDQ = 100 mA IDQ = 100 mA Min.
30 18 50 30:1 22 55 Typ .
Max.
Un it W dB % VSW R Load f = 30MHz Mismatch All Angles IMPEDANCE DATA FREQ .
30 MHz Z IN ( Ω ) 24.
4 - j 13.
4 Z DL ( Ω) 28.
8 + j 7.
2 2/8 SD2918 TYPICAL PERFORMANCE Capacitance vs Drain-Source Voltage Maxi...



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