DatasheetsPDF.com

DL-100-7-KERSMD

Part Number	DL-100-7-KERSMD
Manufacturer	Pacific Silicon Sensor
Description	Photo Diodes
Published	Dec 6, 2005
Detailed Description	DL-100-7-KER SMD Position Sensing Photodiodes Special characteristics: dual-axis, duo-lateral PSD active area 10 x 10 mm...
Datasheet	DL-100-7-KERSMD PDF File

Overview

DL-100-7-KER SMD Position Sensing Photodiodes Special characteristics: dual-axis, duo-lateral PSD active area 10 x 10 mm high position resolution and high linearity Parameters: active area Dark current at 10 V Capacitance at 10 V, 100 kHz Spectral responsivity at 633 nm at 850 nm Interelectrode resistance at E = 0 lx Rise time at 10 V, 50 Ω, 865 nm Noise limited resolution at 632 nm, 0.
5 µW Position Detection Error 1) at 632 nm Breakdown voltage Package Operating temperature Storage temperature DL-100-7-KER SMD 10 x 10 mm 100 mm2 max.
300 nA typ.
80 nA typ.
75 pF typ.
0,4 A/W typ.
0,62 A/W typ.
12 kΩ typ.
4 µs 0.
2 µm chip surface Package 22 (SMD) 2.
1± 0.
15 1.
0 +0.
1 10.
16 15.
24 1.
6 (2.
54) ANODE 1 1.
5 CATHODE 2 0.
63 Active area: (10 x 10) mm2 Ceramic S.
M.
-20 .
.
.
+70°C -60 .
.
.
+100°C 1) measurement conditions: Spot size: 0,5 mm, Scan Interval: 1 mm Wavelength: 633 nm w w d .
wwww.
silicon-sensor.
com Version: 02-09-06 e e h s a t a .
u t4 m o c CATHODE 1 ANODE 2 21.
0 ±...

Similar Datasheet

DL-100-7-KERSMD Photo Diodes - Pacific Silicon Sensor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)