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MTD6P10E

Part Number	MTD6P10E
Manufacturer	Motorola
Description	TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM
Published	Dec 7, 2005
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD6P10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect ...
Datasheet	MTD6P10E PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD6P10E/D ™ Data Sheet TMOS E-FET.
™ Power Field Effect Transistor DPAK for Surface Mount Designer's MTD6P10E Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additi...

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