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STY34NB50

ST Microelectronics
Part Number STY34NB50
Manufacturer ST Microelectronics
Description N-CHANNEL Power MOSFET
Published Dec 7, 2005
Detailed Description ® STY34NB50 N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH™ MOSFET TYPE ST Y34NB50 s s s s s s s V DSS 500 V R D...
Datasheet PDF File STY34NB50 PDF File

STY34NB50
STY34NB50


Overview
® STY34NB50 N - CHANNEL 500V - 0.
11Ω - 34 A - Max247 PowerMESH™ MOSFET TYPE ST Y34NB50 s s s s s s s V DSS 500 V R DS(on) < 0.
13 Ω ID 34 A TYPICAL RDS(on) = 0.
11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate...



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