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MB8117800A

ETC
Part Number MB8117800A
Manufacturer ETC
Description 2 M X 8 BIT FAST PAGE MODE DYNAMIC RAM
Published Dec 11, 2005
Detailed Description To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-10167-3E MEMORY CMOS 2 M × 8 BIT FAST PAGE MODE DYNAMIC...
Datasheet PDF File MB8117800A PDF File

MB8117800A
MB8117800A

Overview
To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-10167-3E MEMORY CMOS 2 M × 8 BIT FAST PAGE MODE DYNAMIC RAM MB8117800A-60/-70 CMOS 2,097,152 × 8 Bit Fast Page Mode Dynamic RAM s DESCRIPTION The Fujitsu MB8117800A is a fully decoded CMOS Dynamic RAM (DRAM) that contains 16,777,216 memory cells accessible in 8-bit increments.
The MB8117800A features a “fast page” mode of operation whereby highspeed random access of up to 1,024-bits of data within the same row can be selected.
The MB8117800A DRAM is ideally suited for mainframe, buffers, hand-held computers video imaging equipment, and other memory applications where very low power dissipation and high bandwidth are basic requirements of the design.
Since the standby current of the MB8117800A is very small, the device can be used as a non-volatile memory in equipment that uses batteries for primary and/or auxiliary power.
The MB8117800A is fabricated using silicon gate CMOS and Fujitsu’s advanced four-layer polysilicon and twolayer aluminum process.
This process, coupled with advanced stacked capacitor memory cells, reduces the possibility of soft errors and extends the time interval between memory refreshes.
Clock timing requirements for the MB8117800A are not critical and all inputs are TTL compatible.
s PRODUCT LINE & FEATURES Parameter RAS Access Time Random Cycle Time Address Access Time CAS Access Time Hyper Page Mode Cycle Time Low Power Dissipation • • • • • • Operating Current Standby Current MB8117800A-60 60 ns max.
110 ns min.
30 ns max.
15 ns max.
40 ns min.
715 mW max.
MB8117800A-70 70 ns max.
130 ns min.
35 ns max.
17 ns max.
45 ns min.
660 mW max.
11 mW max.
(TTL level) / 5.
5 mW max.
(CMOS level) • RAS-only, CAS-before-RAS, or Hidden Refresh • Fast Page Mode, Read-Modify-Write capability • On chip substrate bias generator for high performance 2,097,152 words × 8 bit organization Silicon gate, CMOS, Advanced Capacitor Cell All input and output are TTL compatible 2048 refresh cycles eve...


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