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STP40NF10L

ST Microelectronics
Part Number STP40NF10L
Manufacturer ST Microelectronics
Description N-CHANNEL POWER MOSFET
Published Dec 18, 2005
Detailed Description N-CHANNEL 100V - 0.028Ω - 40A TO-220 LOW GATE CHARGE STripFET™ POWER MOSFET TYPE STP40NF10L s s s s STP40NF10L VDSS 10...
Datasheet PDF File STP40NF10L PDF File

STP40NF10L
STP40NF10L

Overview
N-CHANNEL 100V - 0.
028Ω - 40A TO-220 LOW GATE CHARGE STripFET™ POWER MOSFET TYPE STP40NF10L s s s s STP40NF10L VDSS 100 V RDS(on) < 0.
033 Ω ID 40 A TYPICAL RDS(on) = 0.
028Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION TO-220 3 1 2 DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application.
It is also intended for any application with low gate charge drive requirements.
APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL s AUTOMOTIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max.
Operating Junction Temperature Value 100 100 ± 15 40 25 160 150 1 430 –65 to 175 175 Unit V V V A A A W W/°C mJ °C °C (q) Pulse width limited by safe operating area (1) Starting T j = 25°C, I D = 20A, VDD = 40V April 2001 1/8 STP40NF10L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1 62.
5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 15V Min.
100 1 10 ±100 Typ.
Max.
Unit V µA µA nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Thresh...


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