DatasheetsPDF.com

MTP12N10E

Motorola
Part Number MTP12N10E
Manufacturer Motorola
Description TMOS POWER FET
Published Dec 19, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP12N10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect...
Datasheet PDF File MTP12N10E PDF File

MTP12N10E
MTP12N10E

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP12N10E/D ™ Data Sheet TMOS E-FET.
™ Power Field Effect Transistor Designer's MTP12N10E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Designed to Eliminate the Need for External Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode • Commutating Safe Operating Area (CSOA) Specified for Use in Half and Full Bridge Circuits • Source–to–Drain Diode Recovery Time Comparable to a ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)