DatasheetsPDF.com

MTP10N40E

Motorola
Part Number MTP10N40E
Manufacturer Motorola
Description TMOS POWER FET
Published Dec 19, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP10N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power ...
Datasheet PDF File MTP10N40E PDF File

MTP10N40E
MTP10N40E

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP10N40E/D ™ Data Sheet TMOS E-FET.
™ High Energy Power FET Designer's MTP10N40E TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.
55 OHMS N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switche...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)