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MTP1N80E

Motorola
Part Number MTP1N80E
Manufacturer Motorola
Description TMOS POWER FET
Published Dec 19, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N80E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect ...
Datasheet PDF File MTP1N80E PDF File

MTP1N80E
MTP1N80E

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N80E/D ™ Data Sheet TMOS E-FET.
™ Power Field Effect Transistor Designer's MTP1N80E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time.
In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these ...


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