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MTP16N25E

Motorola
Part Number MTP16N25E
Manufacturer Motorola
Description TMOS POWER FET
Published Dec 19, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP16N25E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect...
Datasheet PDF File MTP16N25E PDF File

MTP16N25E
MTP16N25E

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP16N25E/D ™ Data Sheet TMOS E-FET.
™ Power Field Effect Transistor Designer's MTP16N25E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin ag...


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