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MTP1306

Motorola
Part Number MTP1306
Manufacturer Motorola
Description TMOS POWER FET
Published Dec 19, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1306/D Advance Information HDTMOS E-FET.™ High Densi...
Datasheet PDF File MTP1306 PDF File

MTP1306
MTP1306

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1306/D Advance Information HDTMOS E-FET.
™ High Density Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes.
This new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage...


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