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PM100RSE120

Mitsubishi Electric Semiconductor
Part Number PM100RSE120
Manufacturer Mitsubishi Electric Semiconductor
Description Intelligent Power Module
Published Dec 21, 2005
Detailed Description MITSUBISHI MITSUBISHI MODULES> PM100RSE120 PM100RSE120 FLAT-BASE FLAT-BA...
Datasheet PDF File PM100RSE120 PDF File

PM100RSE120
PM100RSE120


Overview
MITSUBISHI MITSUBISHI MODULES> PM100RSE120 PM100RSE120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM100RSE120 FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.
b) Using new Diode which is designed to get soft reverse recovery characteristics.
• 3φ 100A, 1200V Current-sense IGBT for 15kHz switching • 50A, 1200V Current-sense regenerative brake IGBT • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage • Acoustic noise-less 18.
5/22kW class inverter applic...



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