DatasheetsPDF.com

MRF175GV

Tyco Electronics
Part Number MRF175GV
Manufacturer Tyco Electronics
Description (MRF175GU/GV) N-CHANNEL MOS BROADBAND RF POWER FETs
Published Dec 26, 2005
Detailed Description SEMICONDUCTOR TECHNICAL DATA Order this document by MRF175GU/D The RF MOSFET Line RF Power Field-Effect Transistors N...
Datasheet PDF File MRF175GV PDF File

MRF175GV
MRF175GV

Overview
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF175GU/D The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz.
The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
• Guaranteed Performance MRF175GV @ 28 V, 225 MHz (“V” Suffix) Output Power — 200 Watts Power Gain — 14 dB Typ Efficiency — 65% Typ MRF175GU @ 28 V, 400 MHz (“U” Suffix) Output Power — 150 Watts Power Gain — 12 dB Typ Efficiency — 55% Typ • 100% Ruggedness Tested At Rated Output Power • Low Thermal Resistance • Low Crss — 20 pF Typ @ VDS = 28 V G G S (FLANGE) MRF175GU MRF175GV 200/150 WATTS, 28 V, 500 MHz N–CHANNEL MOS BROADBAND RF POWER FETs D CASE 375–04, STYLE 2 D MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.
0 MΩ) Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 65 65 ±40 26 400 2.
27 –65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Max 0.
44 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain–Source Breakdown Voltage (VGS = 0, ID = 50 mA) Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) Gate–Source Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 65 — — — — — — 2.
5 1.
0 Vdc mAdc µAdc (continued) Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.
REV 8 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)