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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63804P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY
PIN CONFIGURATION
IN1→ 1
16 → O1
DESCRIPTION M63804P, M63804FP, M63804GP and M64804KP are seven-circuit Singe transistor arrays. The circuits are made of NPNtransistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
IN2→ 2
15 → O2
14 → O3
IN3→ 3
INPUT
IN4→ 4
13 → O4
OUTPUT
IN5→ 5
IN6→ 6
12 → O5
11 → O6
IN7→ 7
10 → O7
9
FEATURES q Four package configurations (P, FP, GP and KP) q Medium breakdown voltage (BVCEO ≥ 35V) q Synchronizing current (IC(max) = 300mA) q Low output saturation voltage q Wide operating temperature range (Ta = –40 to +85 °C)
GND
8
16P4(P) 16P2N-A(FP) 16P2S-A(GP) Package type 16P2Z-A(KP)
CIRCUIT DIAGRAM
APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals
FUNCTION The M63804P, M63804FP, M63804GP and M63804KP each have seven circuits consisting of NPNtransistor. The transistor emitters are all connected to the GND pin (pin 8) The transistors allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector and emitter.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol VCEO IC VI Parameter Collector-emitter voltage Collector current Input voltage M63804P Pd Power dissipation Ta = 25°C, when mounted on board Topr Tstg Operating temperature Storage temperature M63804FP M63804GP M63804KP Output, H Current per circuit output, L Conditions Ratings –0. 5 ~ +35 300 –0. 5 ~ +35 1. 47 1. 00 0. 80 0. 78 –40 ~ +85 –55 ~ +125 Unit V mA V
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INPUT
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U 4
10. 5k 10k
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NC
OUTPUT
NC : No connection
GND
The seven circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω
W
°C °C
Jan. 2000
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