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MSG43004

Panasonic Semiconductor
Part Number MSG43004
Manufacturer Panasonic Semiconductor
Description Transistor
Published Dec 28, 2005
Detailed Description Transistors MSG43004 SiGe HBT type For low-noise RF amplifier 0.60±0.05 Unit: mm ■ Features • Compatible between high...
Datasheet PDF File MSG43004 PDF File

MSG43004
MSG43004

Overview
Transistors MSG43004 SiGe HBT type For low-noise RF amplifier 0.
60±0.
05 Unit: mm ■ Features • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Optimal size reduction and high level integration for ultra-small packages 3 2 1 1.
00±0.
05 0.
39+0.
01 −0.
03 0.
15±0.
05 0.
05±0.
03 0.
35±0.
01 0.
25±0.
05 0.
50±0.
05 0.
25±0.
05 1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 9 6 1 100 100 125 −55 to +125 Unit V V V mA mW °C °C 3 0.
65±0.
01 2 0.
05±0.
03 1: Base 2: Emitter 3: Collector ML3-N2 Package Marking Symbol: 5Y Note) *: Copper plate at the collector is 5.
0 mm2 on substrate at 10 mm × 12 mm × 0.
8 mm.
■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Transition frequency * * Symbol ICBO ICEO IEBO hFE fT S21e2 NF Cob Conditions VCB = 9 V, IE = 0 VCE = 6 V, IB = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 15 mA VCE = 3 V, IC = 30 mA, f = 2 GHz VCE = 3 V, IC = 30 mA, f = 2 GHz VCE = 3 V, IC = 15 mA, f = 2 GHz VCB = 3 V, IE = 0, f = 1 MHz Min Typ Max 1 1 1 Unit µA µA µA  GHz dB 100 17 6.
0 9.
0 1.
4 0.
6 220 Forward transfer gain * Noise figure Collector output capacitance (Common base, input open circuited) * 2.
0 0.
9 dB pF Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
Observe precautions for handling.
Electrostatic sensitive devices.
3.
*: Verified by random sampling Publication date: November 2004 SJC00320BED 1 MSG43004 PC  Ta 120 14 IB = 10 µA step 12 IC  VCE 180 160 hFE  IC VCE = 3 V Collector power dissipation PC (...


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