DatasheetsPDF.com

DL100-7-KER

Part Number	DL100-7-KER
Manufacturer	Silicon Sensor
Description	Position Sensing Photodiodes Special characteristics
Published	Dec 28, 2005
Detailed Description	DL-100-7-KER pin Position Sensing Photodiodes Special characteristics: dual-axis, duo-lateral PSD active area 10 x 10 mm...
Datasheet	DL100-7-KER PDF File

Overview

DL-100-7-KER pin Position Sensing Photodiodes Special characteristics: dual-axis, duo-lateral PSD active area 10 x 10 mm high position resolution and high linearity Parameters: active area Dark current at 10 V Capacitance at 10 V, 100 kHz Spectral responsivity at 633 nm at 850 nm Interelectrode resistance at E = 0 lx Rise time at 10 V, 50 Ω, 865 nm Noise limited resolution at 632 nm, 0.
5 µW Position Detection Error 1) at 632 nm Breakdown voltage Package Operating temperature Storage temperature DL-100-7-KER pin 10 x 10 mm 100 mm2 max.
300 nA typ.
80 nA typ.
75 pF typ.
0,4 A/W typ.
0,62 A/W typ.
12 kΩ chip surface Package 21 (SMD with pins) 2.
1± 0.
15 10.
16 15.
24 0.
45 1.
0 +0.
1 ANODE 1 CATHODE 2 typ.
4 µs 0.
2 µm +/- 1% typ.
30 V Ceramic with pins 25.
4 Chip: DL-100-7 25.
0 ± 0.
2 -20 .
.
.
+70°C -60 .
.
.
+100°C Active area: (10 x 10) mm2 1) measurement conditions: Spot size: 0,5 mm, Scan Interval: 1 mm Wavelength: 633 nm CATHODE 1 ANODE 2 21.
0 ± 0.
2 www.
silicon-sensor.
com Version...

Similar Datasheet

DL100-7-KER Position Sensing Photodiodes Special characteristics - Silicon Sensor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)