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BUZ900DP

ETC
Part Number BUZ900DP
Manufacturer ETC
Description (BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET
Published Dec 31, 2005
Detailed Description MAGNA TEC 20.0 5.0 BUZ900DP BUZ901DP MECHANICAL DATA Dimensions in mm 3.3 Dia. N–CHANNEL POWER MOSFET POWER MOSFETS...
Datasheet PDF File BUZ900DP PDF File

BUZ900DP
BUZ900DP


Overview
MAGNA TEC 20.
0 5.
0 BUZ900DP BUZ901DP MECHANICAL DATA Dimensions in mm 3.
3 Dia.
N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2.
0 2 3 2.
0 1.
0 • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING 1.
2 0.
6 2.
8 3.
4 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE AS BUZ905DP & BUZ906DP • DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE 5.
45 5.
45 TO–3PBL Pin 1 – Gate Pin 2 – Source Case is Source Pin 3 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate – Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction – Case @ Tcase = 25°C BUZ900DP 160V 16A 16A 250W –55 to 150°C 150°C 0.
5°C/W BUZ901DP 200V ±14V Magnatec.
Telephone (01455) 554711.
Telex: 341927.
Fax (01455) 552612.
Prelim.
2/95 MAGNA TEC Characteristic BVDSX BVGSS VGS(OFF) VDS(SAT)* Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Gate – Source Cut–Off Voltage Drain – Source Saturation Voltage BUZ900DP BUZ901DP STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Test Conditions VGS = –10V ID = 10mA VDS = 0 VDS = 10V VGD = 0 BUZ900DP BUZ901DP IG = ±100µA ID = 100mA ID = 16A VDS = 160V IDSX Drain – Source Cut–Off Current VGS = –10V BUZ900DP VDS = 200V BUZ901DP yfs* Forward Transfer Admittance VDS = 10V ID = 3A 1.
4 Min.
160 200 ±14 0.
1 Typ.
Max.
Unit V V 1.
5 12 10 V V mA 10 4 S DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Characteristic Ciss Coss Crss ton toff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–on Time Turn-off Time Test Conditions VDS = 10V f = 1MHz VDS = 20V ID = 7A Min.
Typ.
950 550 18 160 80 Max.
Unit pF ns * Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2%.
300 Der...


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