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MRF187SR3

Part Number	MRF187SR3
Manufacturer	Motorola
Description	RF POWER FIELD EFFECT TRANSISTORS
Published	Jan 2, 2006
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF187/D The RF MOSFET Line N–Channel Enhancement–Mode ...
Datasheet	MRF187SR3 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF187/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.
0 GHz.
The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 26 volt base station equipment.
• Guaranteed Performance @ 880 MHz, 26 Volts Output Power — 85 Watts PEP Power Gain — 12 dB Efficiency — 30% Intermodulation Distortion — –28 dBc • 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, 880 MHz, 85 Watts CW • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Available in Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
1.
0 GHz, 85 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs LIFETIME BUY CASE 465–06, STYLE 1 NI–780 MRF187 CASE 465A–06, STYLE 1 NI–780S MRF187SR3 MAXIMUM RATINGS Rat...

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MRF187SR3 RF POWER FIELD EFFECT TRANSISTORS - Motorola

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