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MRF18060ALSR3

Part Number	MRF18060ALSR3
Manufacturer	Motorola
Description	RF POWER FIELD EFFECT TRANSISTORS
Published	Jan 2, 2006
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18060A/D MRF18060A RF Power Field Effect Transistors ...
Datasheet	MRF18060ALSR3 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18060A/D MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from MRF18060ASR3 1.
8 to 2.
0 GHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier The RF MOSFET Line applications.
To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
Specified for GSM1805 – 1880 MHz.
• Typical GSM Performance, Full Frequency Band (1805 – 1880 MHz) Power Gain — 13 dB (Typ) @ 60 Watts Efficiency — 45% (Typ) @ 60 Watts • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power • Excellent Thermal Stability • Available in Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
• Available with Low Gold Plating Thickness on Leads.
L Suffix Indicates 40µ″ Nominal.
1.
80 – 1.
88 GHz, 60 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465–06, STYLE 1 NI–780 MRF18060A CASE 465A–06, STYLE 1 NI–780S MRF18060ALSR3, MRF18060ASR3 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC ≥ 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 –0.
5, +15 180 1.
03 –65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.
97 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.
REV 5 MOTOROLA RF DEVICE DATA  Motorola, Inc.
2002 MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 1 ELECT...

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