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SSW10N60B

Fairchild Semiconductor
Part Number SSW10N60B
Manufacturer Fairchild Semiconductor
Description 600V N-Channel MOSFET
Published Jan 3, 2006
Detailed Description SSW10N60B / SSI10N60B November 2001 SSW10N60B / SSI10N60B 600V N-Channel MOSFET General Description These N-Channel en...
Datasheet PDF File SSW10N60B PDF File

SSW10N60B
SSW10N60B

Overview
SSW10N60B / SSI10N60B November 2001 SSW10N60B / SSI10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
Features • • • • • • 9.
0A, 600V, RDS(on) = 0.
8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ...


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