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MT58L256L32F

Micron Semiconductor
Part Number MT58L256L32F
Manufacturer Micron Semiconductor
Description (MT58Lxxxx) 8Mb SYNCBURST SRAM
Published Jan 4, 2006
Detailed Description . U 4 t ™ 8Mb SYNCBURST e e h SRAM S a t a D . FEATURES w w w m o c 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURS...
Datasheet PDF File MT58L256L32F PDF File

MT58L256L32F
MT58L256L32F

Overview
.
U 4 t ™ 8Mb SYNCBURST e e h SRAM S a t a D .
FEATURES w w w m o c 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 3.
3V VDD, 3.
3V or 2.
5V I/O, Flow-Through • Fast clock and OE# access times • Single +3.
3V +0.
3V/-0.
165V power supply (VDD) • Separate +3.
3V or +2.
5V isolated output buffer supply (VDDQ) • SNOOZE MODE for reduced-power standby • Common data inputs and data outputs • Individual BYTE WRITE control and GLOBAL WRITE • Three chip enables for simple depth expansion and address pipelining • Clock-controlled and registered addresses, data I/Os and control signals • Internally self-timed WRITE cycle • Burst control (interleaved or linear burst) • Automatic power-down for portable applications • 100-pin TQFP package • 165-pin FBGA • Low capacitive bus loading • x18, x32, and x36 versions available 100-Pin TQFP1 OPTIONS • Timing (Access/Cycle/MHz) 7.
5ns/8.
8ns/113 MHz 8.
5ns/10ns/100 MHz 10...


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