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2SK665

Panasonic Semiconductor
Part Number 2SK665
Manufacturer Panasonic Semiconductor
Description Silicon MOS FETs
Published Jan 6, 2006
Detailed Description Silicon MOS FETs (Small Signal) 2SK0665 (2SK665) Silicon N-Channel MOS FET unit: mm (0.425) For switching I Features ...
Datasheet PDF File 2SK665 PDF File

2SK665
2SK665

Overview
Silicon MOS FETs (Small Signal) 2SK0665 (2SK665) Silicon N-Channel MOS FET unit: mm (0.
425) For switching I Features 0.
3+0.
1 –0.
0 3 0.
15+0.
10 –0.
05 1.
25±0.
10 (0.
65) (0.
65) 1.
3±0.
1 2.
0±0.
2 10° Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 20 8 100 200 150 150 −55 to +150 Unit V V mA mA mW °C °C 1: Gate 2: Source 3: Drain 0 to 0.
1 0.
9±0.
1 0.
9+0.
2 –0.
1 I Absolute Maximum Ratings (Ta = 25°C) EIAJ: SC-70 SMini3-G1 Package Marking Symbol: 3O Internal Connection D R1 G R2 S I Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance High level output voltage Low level output voltage Input resistance Turn-on time Turn-off time *1 Symbol IDSS IGSS VDSS Vth RD...


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