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MX28F2100B

Part Number	MX28F2100B
Manufacturer	Macronix International
Description	2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
Published	Jan 6, 2006
Detailed Description	PRELIMINARY MX28F2100B 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast ...
Datasheet	MX28F2100B PDF File

Overview

PRELIMINARY MX28F2100B 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100uA maximum standby current • Programming and erasing voltage 12V ± 7% • Command register architecture – Byte/Word Programming (50 us typical) – Auto chip erase 5 sec typical (including preprogramming time) – Block Erase (Any one from 5 blocks:16K-Byte x1, 8K-Byte x2, 96K-Byte x1, and 128K-Byte x1) – Auto Erase with Erase Suspend capability • Status Register feature for Device status detection • Auto Erase (chip & block) and Auto Program – Status Registers • 10,000 minimum erase/program cycle...

Similar Datasheet

MX28F2100B 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY - Macronix International

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