DatasheetsPDF.com

UPA677TB

NEC
Part Number UPA677TB
Manufacturer NEC
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Published Jan 7, 2006
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA677TB N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The ...
Datasheet PDF File UPA677TB PDF File

UPA677TB
UPA677TB

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA677TB N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA677TB is a switching device which can be driven directly by a 2.
5 V power source.
The µPA677TB features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
1.
25 ±0.
1 2.
1 ±0.
1 PACKAGE DRAWING (Unit: mm) 0.
2 -0 +0.
1 0.
15 -0.
05 +0.
1 6 5 4 0 to 0.
1 FEATURES • 2.
5 V drive available • Low on-state resistance RDS(on)1 = 0.
57 Ω MAX.
(VGS = 4.
5 V, ID = 0.
30 A) RDS(on)2 = 0.
60 Ω MAX.
(VGS = 4.
0 V, ID = 0.
30 A) RDS(on)3 = 0.
88 Ω MAX.
(VGS = 2.
5 V, ID = 0.
15 A) • Two MOS FET circuits in same size package as SC-70 1 2 3 0.
7 0.
9 ±0.
1 0.
65 0.
65 1.
3 2.
0 ±0.
2 ORDERING INFORMATION PART NUMBER PACKAGE SC-88 (SSP) µPA677TB Marking: WA ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 PIN CONNECTUON (Top View) 20 ±12 ±0.
35 ±1.
40 0.
2 150 −55 to +150 V V A A W °C °C 1 2 3 1: 2: 3: 4: 5: 6: Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain 1 6 5 4 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Total Power Dissipation(2units) Channel Temperature Storage Temperature Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2.
Mounted on FR-4 Board of 2500 mm x 1.
1 mm 2units total.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge.
VESD = ±200 V TYP.
(C = 200 pF, R = 0 Ω, Single pulse) The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest versio...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)