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MTV32N20E

Motorola
Part Number MTV32N20E
Manufacturer Motorola
Description TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM
Published Jan 8, 2006
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV32N20E/D Advance Information TMOS E-FET.™ Power Fiel...
Datasheet PDF File MTV32N20E PDF File

MTV32N20E
MTV32N20E

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV32N20E/D Advance Information TMOS E-FET.
™ Power Field Effect Transistor D3PAK for Surface Mount This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time.
In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for high speed switching applications in power supplies, converters, PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination • Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature MTV32N20E TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.
075 OHM N–Channel Enhancement–Mode Silicon Gate ® D N–Channel G CASE 433–01, Style 2 D3PAK Surface Mount S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.
0 MΩ) Gate–to–Source Voltage — Continuous Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (1) Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, Peak IL = 32 Apk, L = 1.
58 mH, RG = 25 Ω ) Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Thermal Resistance — Junction to Ambient (1) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds (1) When surface moun...


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