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2SK2642-01MR

Fuji Semiconductors
Part Number 2SK2642-01MR
Manufacturer Fuji Semiconductors
Description N-Channel Silicon Power MOSFET
Published Jan 11, 2006
Detailed Description o c . U 4 Features t e High speed switching e h Low on-resistance S No secondary breakdown apower t Low driving a High D...
Datasheet PDF File 2SK2642-01MR PDF File

2SK2642-01MR
2SK2642-01MR

Overview
o c .
U 4 Features t e High speed switching e h Low on-resistance S No secondary breakdown apower t Low driving a High D voltage .
V =±35V Guarantee w Avalanche-proof w w GS 2SK2642-01MR m FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220F15 2.
54 Applications Switching regulators UPS DC-DC converters General purpose power amplifier Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max.
power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 500 ±15 ±60 ±35 88.
7 50 +150 -55 to +150 Unit V A A V mJ W °C °C Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Symbol V(BR)DSS VGS(th) IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge m o .
c U 4 t e e h S a t a .
D w w w Gate(G) 3.
Source Equivalent circuit schematic Drain(D) Source(S) *1 L=0.
72mH, Vcc=50V Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS Min.
Typ.
Max.
Units V V µA mA nA Ω S pF 500 3.
5 IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD trr Qrr VDS=500V VGS=0V VGS=±35V VDS=0V ID=7.
5A VGS=10V Tch=25°C Tch=125°C ID=7.
5A VDS=25V VDS =25V VGS=0V f=1MHz 4.
5 VCC=300V ID=15A VGS=10V RGS=10 Ω L=100µH Tch=25°C IF=2xID VGS=0V Tch=25°C IF=ID VGS=0V -di/dt=100A/µs Tch=25°C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient m o .
c U 4 t e e h S a at .
D w w w ns 15 1.
1 500 8.
0 1.
65 A V ns µC 4.
0 4.
5 10 500 0.
2 1.
0 10 100 0.
44 0.
55 9.
0 1400 2100 250 380 110 170...


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