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FLM5964-6F

Eudyna Devices
Part Number FLM5964-6F
Manufacturer Eudyna Devices
Description C-Band Internally Matched FET
Published Jan 12, 2006
Detailed Description w m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 38.5dBm (Typ.) U • High Gain: G1dB = 10.0dB...
Datasheet PDF File FLM5964-6F PDF File

FLM5964-6F
FLM5964-6F


Overview
w m C-Band Internally Matched FET o FEATURES .
c • High Output Power: P1dB = 38.
5dBm (Typ.
) U • High Gain: G1dB = 10.
0dB (Typ.
) 4 t • High PAE: ηadd = 37% (Typ.
) e = 27.
5dBm • Low IM3 = -46dBc@Po e • Broad Band: 5.
9h ~ 6.
4GHz S • Impedance Matched Zin/Zout = 50Ω aSealed Package t • Hermetically a DESCRIPTION D .
The FLM5964-6F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum power and gain in a w 50 ohm system.
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Condition FLM5964-6F Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Tc = 25°C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1.
The drain-source operating voltage (VDS) should not exceed 10 volts.
2.
The forward and reverse gate currents should not exceed 16.
0 and -2.
8 mA respectively with gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Symbol Test Conditions Min.
-0.
5 -5.
0 37.
5 VDS =10V, IDS = 0.
65IDSS (Typ.
), f = 5.
9 ~ 6.
4 GHz, ZS=ZL= 50 ohm f = 6.
4 GHz, ∆f = 10 MHz 2-Tone Test Pout = 27.
5dBm S.
C.
L.
Channel to Case 10V x Idsr x Rth 9.
0 -44 Limit Typ.
Max.
2500 3750 2500 -1.
5 38.
5 10.
0 37 -46 4.
0 -3.
0 ±0.
6 Unit mA mS V V dBm dB mA % Gate Source Breakdown Voltage Output Power at 1dB G.
C.
P.
Power Gain at 1dB G.
C.
P.
Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IB w w .
D w IDSS gm Vp t a S a e h t e U 4 Rating 15 -5 31.
2 .
c 175 m o Unit V V W °C °C -65 to +175 VDS = 5V, VGS = 0V VDS = 5V, IDS =1625mA VDS = 5V, IDS =125mA IGS = -125µA VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch 1625 1900 G.
C.
P.
: Gain Compression Po...


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