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FLM5964-18F

Eudyna Devices
Part Number FLM5964-18F
Manufacturer Eudyna Devices
Description C-Band Internally Matched FET
Published Jan 12, 2006
Detailed Description w m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 43.0dBm (Typ.) U • High Gain: G1dB = 10.0dB...
Datasheet PDF File FLM5964-18F PDF File

FLM5964-18F
FLM5964-18F

Overview
w m C-Band Internally Matched FET o FEATURES .
c • High Output Power: P1dB = 43.
0dBm (Typ.
) U • High Gain: G1dB = 10.
0dB (Typ.
) 4 t • High PAE: ηadd = 37% (Typ.
) e = 32.
0dBm • Low IM3 = -46dBc@Po e • Broad Band: 5.
9h ~ 6.
4GHz S • Impedance Matched Zin/Zout = 50Ω aSealed Package t • Hermetically a DESCRIPTION D .
The FLM5964-18F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum power and gain in a w 50 ohm system.
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Condition FLM5964-18F Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Tc = 25°C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1.
The drain-source operating voltage (VDS) should not exceed 10 volts.
2.
The forward and reverse gate currents sh...


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