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SSS4N80AS

Fairchild Semiconductor
Part Number SSS4N80AS
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Jan 14, 2006
Detailed Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Datasheet PDF File SSS4N80AS PDF File

SSS4N80AS
SSS4N80AS

Overview
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.
) @ VDS = 800V Low RDS(ON) : 2.
450 Ω (Typ.
) SSS4N80AS BVDSS = 800 V RDS(on) = 3.
0 Ω ID = 2.
8 A TO-220F 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8“ from case for 5-seconds Ο Ο Ο Value 800 2.
8 1.
8 1 O Units V A A V mJ A mJ V/ns W W/ C Ο 18 + _ 30 314 2.
8 4 2.
0 40 0.
32 - 55 to +150 Ο O 1 O 1 O 3 O 2 C 300 Thermal Resistance Symbol R R θJC θJA Characteristic Junction-to-Case Junction-to-Ambient Typ.
--- Max.
3.
13 62.
5 Units Ο C/W Rev.
B ©1999 Fairchild Semiconductor Corporation SSS4N80AS Ο N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min.
Typ.
Max.
Units 800 -2.
0 -----------------0.
96 ------2.
75 90 35 19 32 67 32 40 7.
3 18.
1 --3.
5 100 -100 25 250 3.
0 -105 42 50 75 145 75 52 --nC ns µA Ω Ω pF V V/ C V nA Ο ...


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