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TC58DVM82A1FT00

Part Number	TC58DVM82A1FT00
Manufacturer	Toshiba Semiconductor
Description	256-MBIT (32M x 8 BITS) CMOS NAND E2PROM
Published	Jan 14, 2006
Detailed Description	m o TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS .c U CMOS NAND E PROM 256-MBIT (32M × 8 BITS) 4 t DESCRIPTI...
Datasheet	TC58DVM82A1FT00 PDF File

Overview

m o TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS .
c U CMOS NAND E PROM 256-MBIT (32M × 8 BITS) 4 t DESCRIPTION e e h S a at .
D w w FEATURES w 2 TC58DVM82A1FT00 The device is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks.
The device uses single power supply (2.
7 V to 3.
6 V for VCC).
The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments.
The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes x 32 pages).
The device is a serial-typ...

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TC58DVM82A1FT00 256-MBIT (32M x 8 BITS) CMOS NAND E2PROM - Toshiba Semiconductor

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