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INF8594E

IK Semiconductor
Part Number INF8594E
Manufacturer IK Semiconductor
Description 512 x 8 EEPROM
Published Jan 15, 2006
Detailed Description w e e 512 x 8-bithCMOS EEPROMS with I2CS bus Interface a at The .DINF8594E is а 4-Kbit (512 х 8-bit) floating gate elec...
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INF8594E
INF8594E

Overview
w e e 512 x 8-bithCMOS EEPROMS with I2CS bus Interface a at The .
DINF8594E is а 4-Kbit (512 х 8-bit) floating gate electrically erasable programmable read only memory (ЕЕРPROM).
By using an internal redundant w storage code it is fault tolerant to single bit errors.
This feature dramatically w increases reliability compared to conventional ЕЕРRОМ memories.
Power consumption is low due to the full СМОS technology used.
The programming voltage 1s generated on-chip, using а voltage multiplier.
As data bytes are received and transmitted via the serial I2C-bus, а package using eight pins is sufficient.
Up to four INF8594E devices may be connected to the Ic-bus.
Chip select is accomplished by two address inputs.
Timing of the Erase/Write cycle is done internally, thus no external components are required.
Pin 7 must be connected to either VDD or left open-circuit.
There is an option of using an external clock or timing the length of an Erase/Write cycle.
A write protection input (pin 1) allows disable of write-commands from the master by а hardware signal.
When pin 1 is HIGH and one of the upper 256 ЕЕРRОМ cells is addressed, then the data bytes will not be acknowledged by the INF8594E and the ЕЕРRОМ contents are not changed.
U 4 t m o .
c TECHNICAL DATA INF8594E PIN ASSIGNMENT • Low Power CMOS maximum active current 2.
5 mА • maximum standby current 10 µA • Non-volatile storage of 4-Kbits organized as two pages each 256 х 8-bits • Only one power supply required • On-chip voltage multiplier • Serial input/output bus (I2C) • Write operations byte write mode 8.
byte page write mode (minimizes total write time рег byte) • Write-protection input • Read operations sequential read random read • .
Extended supply voltage range (2,5 to 6.
0 V).
• Internal timer for writing (no external components) • .
Power-on reset • .
High reliability by using а redundant storage code (single bit error correction) • .
Endurance 100 k.
Tamb = 85 °С • 10 years non-volatile data retention time • Pin...


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