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MRF21180R6

Part Number	MRF21180R6
Manufacturer	Motorola
Description	RF Power Field Effect Transistor
Published	Jan 16, 2006
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21180/D The RF Sub - M...
Datasheet	MRF21180R6 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
Order this document by MRF21180/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
• Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 2 x 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.
84 MHz, Adjacent Channels Measured over 3.
84 MHz BW @ f1 - 5 MHz and f2 + 5 MHz.
Distortion Products Measured over a 3.
84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz, Each Carrier Peak/Avg.
= 8.
3 dB @ 0.
01% Probability on CCDF.
Output Power — 38 Watts (Avg.
) Power Gain — 12.
1 dB Efficiency — 22% IM3 — 37.
5 dBc ACPR — - 41 dBc • Internally Input and Output Matched, for Ease of Use • High Gain, High Efficiency, and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 170 Watts (CW) Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • In Tape and Reel.
R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
N - Channel Enhancement - Mode Lateral MOSFET MRF21180R6 2170 MHz, 170 W, 28 V LATERAL N - CHANNEL RF POWER MOSFET Freescale Semiconductor, Inc.
.
.
CASE 375D - 04, STYLE 1 NI - 1230 MAXIMUM RATINGS Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 - 0.
5, +15 380 2.
17 - 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (1) 0.
46 Unit °C/W ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum) (1) Refer to AN...

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