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MRF21090SR3

Part Number	MRF21090SR3
Manufacturer	Motorola
Description	RF Power Field Effect Transistors
Published	Jan 16, 2006
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21090/D The RF Sub - M...
Datasheet	MRF21090SR3 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
Order this document by MRF21090/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
• Typical W - CDMA Performance for 2140 MHz, 28 Volts 4.
096 MHz BW @ 5 MHz offset, 1 PERCH 15 DTCH: Output Power — 11.
5 Watts Efficiency — 16% Gain — 12.
2 dB ACPR — - 45 dBc • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 90 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • In Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
N - Channel Enhancement - Mode Lateral MOSFETs MRF21090R3 MR...

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