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MRF21085LSR3

Motorola
Part Number MRF21085LSR3
Manufacturer Motorola
Description RF Power Field Effect Transistors
Published Jan 16, 2006
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21085/D The RF MOSFET ...
Datasheet PDF File MRF21085LSR3 PDF File

MRF21085LSR3
MRF21085LSR3


Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
Order this document by MRF21085/D The RF MOSFET Line RF Power Field Effect Transistors Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .
To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
• Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 1000 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.
84 MHz, Adjacent Channels Measured over 3.
84 MHz BW @ f1 - 5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.
84 MHz BW @ f1 - 10 MHz and f2 +10 MHz, Peak/Avg.
= 8.
3 dB @ 0.
01% Probability on CCDF.
Output Power — 19 Watts Avg.
Power Gain — 13.
6 dB Efficiency — 23% IM3 — - 37.
5 dBc ACPR — - 41 dBc • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 90 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads.
L Suffix Indicates 40µ″ Nominal.
• In Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature N - Channel Enhancement - Mode Lateral MOSFETs MRF21085R3 MRF21085SR3 MRF21085LSR3 2170 MHz, 90 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs Freescale Semiconductor, Inc.
.
.
CASE 465 - 06, STYLE 1 NI - 780 MRF21085R3 CASE 465A - 06, STYLE 1 NI - 780S MRF21085SR3, MRF21085LSR3 Symbol VDSS VGS PD Tstg TJ Value 65 - 0.
5, +15 224 1.
28 - 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resi...



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