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MRF21030LR3

Part Number	MRF21030LR3
Manufacturer	Motorola
Description	RF Power Field Effect Transistors
Published	Jan 16, 2006
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21030/D The RF MOSFET ...
Datasheet	MRF21030LR3 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
Order this document by MRF21030/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 2.
0 to 2.
2 GHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
• Wideband CDMA Performance: - 45 dB ACPR @ 4.
096 MHz, 28 Volts Output Power — 3.
5 Watts Power Gain — 14 dB Efficiency — 15% • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.
11 GHz, 30 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel.
R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
N - Channel Enhancement - Mode Lateral MOSFETs...

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