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02N60P

ETC
Part Number 02N60P
Manufacturer ETC
Description SSM02N60P
Published Jan 18, 2006
Detailed Description www.DataSheet4U.com SSM02N60P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Repetitive-avalanche rated Fast-switching Simple ...
Datasheet PDF File 02N60P PDF File

02N60P
02N60P


Overview
www.
DataSheet4U.
com SSM02N60P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Repetitive-avalanche rated Fast-switching Simple drive requirement G D BV DSS RDS(ON) ID TO-220 600V 8Ω 2A Description S The TO-220 package is widely preferred for commercial and industrial applications.
The SSM02N60P is well suited for DC/DC and AC/DC converters in telecom, industrial and consumer applications.
G D S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 600 ± 20 2 1.
26 6 39 0.
31 2 Units V V A A A W W/ ℃ mJ A mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 130 2 2 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 3.
2 62 Unit ℃/W ℃/W Rev.
2.
01 6/06/2003 www.
SiliconStandard.
com 1 of 6 www.
DataSheet4U.
com SSM02N60P Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
600 2 - Typ.
0.
6 0.
2 14 2 8.
5 9.
5 12 21 9 155 27 14 Max.
Units 8 4 10 100 ±100 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150 C) o VGS=10V, ID=1A VDS=VGS, ID=250uA VDS=20V, ID=1A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= ± 20V ID=2A VDS=480V VGS=10V VDD=300V ID=2A RG=10Ω,VGS=10V RD=150Ω VGS=0V VDS=25V f=1.
0MHz Gate-Source Leakage Total Gate Charge 3 ...


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