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HY57V641620ET

Hynix Semiconductor
Part Number HY57V641620ET
Manufacturer Hynix Semiconductor
Description 4-Bank x 1M x 16-Bits SDRAM
Published Jan 18, 2006
Detailed Description m o c . 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O U 4 t e e Document Title h S a Revision at History .D w w w 4B...
Datasheet PDF File HY57V641620ET PDF File

HY57V641620ET
HY57V641620ET

Overview
m o c .
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O U 4 t e e Document Title h S a Revision at History .
D w w w 4Bank x 1M x 16bits Synchronous DRAM Revision No.
History First Version Release 1.
0 1.
Changed tOH: 2.
0 --> 2.
5 [tCK = 7 & 7.
5 (CL3) Product] 1.
1 1.
Changed Input High/Low Voltage (Page 08) 2.
Changed DC characteristics (Page 09) - IDD2NS: 18mA -> 15mA - IDD5:210 / 195 / 180mA -> 170 / 160 / 150mA [Speed 200 / 166 / 143 / 133MHz] 3.
Changed Clock High / Low pulse width Time (Page 11) 4.
Changed tAC Time (Page11) 5.
Changed tRRD Time (Page12) Draft Date Remark Nov.
2004 1.
2 1.
3 1.
4 1.
5 m o .
c U 4 t e e h S a t a .
D w w w Dec.
2004 1.
Corrected Revision No.
: 2.
0 -> 1.
1 2.
...


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