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C30902E

PerkinElmer Optoelectronics
Part Number C30902E
Manufacturer PerkinElmer Optoelectronics
Description (C309xxx) Silicon Avalanche Photodiodes
Published Jan 22, 2006
Detailed Description Description PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diff...
Datasheet PDF File C30902E PDF File

C30902E
C30902E

Overview
Description PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure.
This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths.
Because the fall time characteristics have no "tail”, the responsivity of the device is independent of modulation frequency up to about 800 MHz.
The detector chip is hermetically-sealed behind a flat glass window in a modified TO18 package.
The useful diameter of the photosensitive surface is 0.
5 mm.
PerkinElmer Type C30921E utilizes the same silicon detector chip as the C30902E, but in a package containing a lightpipe which allows efficient coupling of light to the detector from either a focussed spot or an optical fiber up to 0.
25 mm in diameter.
The internal end of the lightpipe is close enough to the detector surface to allow all of the illumination exiting the lightpipe to fall within the active-area of...


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