DatasheetsPDF.com

STS4NF100

ST Microelectronics
Part Number STS4NF100
Manufacturer ST Microelectronics
Description N-CHANNEL POWER MOSFET
Published Jan 23, 2006
Detailed Description N-CHANNEL 100V - 0.065 Ω - 4A SO-8 STripFET™ II POWER MOSFET TYPE STS4NF100 s s s s STS4NF100 VDSS 100 V RDS(on) <0.0...
Datasheet PDF File STS4NF100 PDF File

STS4NF100
STS4NF100

Overview
N-CHANNEL 100V - 0.
065 Ω - 4A SO-8 STripFET™ II POWER MOSFET TYPE STS4NF100 s s s s STS4NF100 VDSS 100 V RDS(on) <0.
070 Ω ID 4A TYPICAL RDS(on) = 0.
065 Ω EXCEPTIONAL dv/dt CAPABILITY 100 % AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications.
It is also intended for any applications with low gate drive requirements.
SO-8 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID IDM(•) Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Value 100 100 ± 20 4 2.
5 16 2.
5 Unit V V V A A A W (•) Pulse width limited by safe operating area.
July 2001 .
1/8 STS4NF100 THERMAL DATA Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient Thermal Operating Junction-ambient Storage Temperature Single Operatio 50 -55 to 150 -55 to 150 °C/W °C °C (*) Mounted on FR-4 board (t [ 10 sec.
) ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 20 V Min.
100 1 10 ±100 Typ.
Max.
Unit V µA µA nA ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 µA ID = 2 A Min.
2 Typ.
3 0.
065 Max.
4 0.
070 Unit V Ω DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Tr...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)