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11ES4

Nihon Inter Electronics
Part Number 11ES4
Manufacturer Nihon Inter Electronics
Description Low Forward Voltage Drop Diode
Published Jan 23, 2006
Detailed Description DIODE Type : 11ES4 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capab...
Datasheet PDF File 11ES4 PDF File

11ES4
11ES4

Overview
DIODE Type : 11ES4 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.
17g Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Symbol VRRM VRSM IO IF(RMS) IFSM Tjw Tstg 0.
98 1.
0 45 11ES4 400 600 Ta=25°C *1 50Hz Half Sine Ta=50°C *2 Wave Resistive Load 1.
57 50Hz Half Sine Wave,1cycle, Non-repetitive - 40 to + 150 - 40 to + 150 Unit V V A A A °C °C Electrical • Thermal Characteristics Characteristics Symbol Conditions Min.
Typ.
Max.
Unit Peak Reverse Current IRM Tj= 25°C, VRM= VRRM - - 50 µA Peak Forward Voltage VFM Tj= 25°C, IFM= 1.
0A - - 1.
0 V Thermal Resistance Rth(j-a) Junction to Ambient *1 *2 - - 140 110 °C/W *1:Without Fin or P.
C.
Board ...


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