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11EQS10

Nihon Inter Electronics
Part Number 11EQS10
Manufacturer Nihon Inter Electronics
Description Low Forward Voltage drop Diode
Published Jan 23, 2006
Detailed Description SBD Type :11EQS10 FEATURES * Miniature Size * Low Forward Voltage Drop * High Surge Capability * 30volts trough 100volts...
Datasheet PDF File 11EQS10 PDF File

11EQS10
11EQS10

Overview
SBD Type :11EQS10 FEATURES * Miniature Size * Low Forward Voltage Drop * High Surge Capability * 30volts trough 100volts Types Available * 26mm and 52mm Inside Tape Spacing Package Available OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.
17g Rating Symbol 11EQS10 Unit Repetitive Peak Reverse Voltage Without Fin or Average Rectified P.
C.
Board Output Current P.
C.
Board Mounted * RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range VRRM IO IF(RMS) IFSM Tjw Tstg 100 V 1.
0 Ta=26°C Half Sine Wave Resistive Load 1.
0 Ta=53°C A 1.
57 40 Half Sine Wave,1cycle,Non-repetitive - 40 to + 150 - 40 to + 150 A A °C °C Electrical • Thermal Characteristics Characteristics Symbol Conditions Peak Reverse Current Peak Forward Voltage Thermal Resistance(Junction to Ambient) * :Print Lands = 5x5 mm,Both Sides IRM Tj= 25°C, VRM= VRRM VFM Tj= 25°C, IFM= 1 A Rth(j-a) Without Fin or P.
C.
Board P.
C.
Board mounted * Min Typ --- -- Max 0.
5 0.
85 140 110 Unit mA V °C/W 11EQS10 OUTLINE DRAWING (Dimensions in mm) ...


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