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PLL620-06

PhaseLink
Part Number PLL620-06
Manufacturer PhaseLink
Description (PLL620-05/06/07/08/09) Low Phase Noise XO
Published Feb 10, 2006
Detailed Description m PLL620-05/-06/-07/-08/-09 o c . XO with multipliers (for 120-200MHz Fund Xtal) Low Phase Noise U Universal Low Phase N...
Datasheet PDF File PLL620-06 PDF File

PLL620-06
PLL620-06


Overview
m PLL620-05/-06/-07/-08/-09 o c .
XO with multipliers (for 120-200MHz Fund Xtal) Low Phase Noise U Universal Low Phase Noise IC’s 4 t e e FEATURES h PIN CONFIGURATION S (Top View) a200MHz Fundamental Mode Crystal.
• 120MHz to t • Output a range: 120 – 200MHz (no multiplication), D 240 – 400MHz (2x multiplier) or 480 – 700MHz .
(4x multiplier).
w •w High yield design support up to 2pF string at 200MHz.
w• capacitance CMOS (Standard drive PLL620-07 or Selectable VDD 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 SEL0^ SEL1^ GND XIN • • GND/ DRIVSEL* Drive PLL620-06), PECL (Enable low PLL620-08 or Enable high PLL620-05) or LVDS output (PLL620-09).
Supports 3.
3V-Power Supply.
Available in 16-Pin (TSSOP or 3x3mm QFN) Note: PLL620-06 only available in 3x3mm.
Note: PLL620-07 only available in TSSOP.
DESCRIPTIONS GND GND GND BLOCK DIAGRAM SEL ^: Internal pull-up *: PLL620-06 pin 12 is output drive select (DRIVSEL) (0 for High Drive CMOS, 1 for Standard Drive CMOS) OE Q Q X+ X- Oscillator Amplifier PLL (Phase Locked Loop) OUTPUT ENABLE LOGICAL LEVELS Part # PLL620-08 PLL620-05 PLL620-06 PLL620-07 PLL620-09 PLL by-pass OE input: Logical states defined by PECL levels for PLL620-08 Logical states defined by CMOS levels for PLL620-05/-06/-07/-09 47745 Fremont Blvd.
, Fremont, California 94538 TEL (510) 492-0990 FAX (510) 492-0991 m o .
c U 4 t e e h S a at .
D w w w 1 (Default) Output enabled Rev 10/29/02 Page 1 OE 0 (Default) 1 0 State Output enabled Tri-state Tri-state GND PLL620-05/-06/-07/-08/-09 are XO IC specifically designed to pull high frequency fundamental crystals.
Their design was optimized to tolerate higher limits of interelectrodes capacitance and bonding capacitance to improve yield.
It achieves very low current into the crystal resulting in better overall stability.
m o .
c U 4 t e e h S a t a .
D w w w XOUT SEL3^ SEL2^ OE GND GND SEL0^ XIN 12 11 10 9 SEL1^ VDD PLL 620-0x CLKC VDD CLKT GND GND 13 8 7 6 5 GND CLKC VDD CLKT XOUT 14 15 PLL...



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