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P3NB60FP

ST Microelectronics
Part Number P3NB60FP
Manufacturer ST Microelectronics
Description STP3NB60FP
Published Feb 15, 2006
Detailed Description m o .c U 4 STP3NB60 t e STP3NB60FP e h S N - CHANNEL ENHANCEMENT MODE a t PowerMESH™ MOSFET a .D w w w TYPE V DSS R DS(o...
Datasheet PDF File P3NB60FP PDF File

P3NB60FP
P3NB60FP

Overview
m o .
c U 4 STP3NB60 t e STP3NB60FP e h S N - CHANNEL ENHANCEMENT MODE a t PowerMESH™ MOSFET a .
D w w w TYPE V DSS R DS(on) ID STP3NB60 STP3NB60FP 600 V 600 V <3.
6 Ω < 3.
6 Ω 3.
3 A 2.
2 A s s s s s TYPICAL RDS(on) = 3.
3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and ...


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