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UPD44165182

NEC
Part Number UPD44165182
Manufacturer NEC
Description (UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION
Published Feb 16, 2006
Detailed Description DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Descrip...
Datasheet PDF File UPD44165182 PDF File

UPD44165182
UPD44165182


Overview
DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
The µPD44165082, µPD44165182 and µPD44165362 integrates unique synchronous peripheral circuitry and a burst counter.
All input registers controlled by an input clock pair (K and /K) are latched on the positive edge of K and /K.
These products are suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit configuration.
These products are packaged in 165-pin PLASTIC BGA.
Features • 1.
8 ± 0.
1 V power supply and HSTL I/O • DLL circuitry for wide output data valid window and future frequency scaling • Separate independent read and write data ports with c...



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