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D2020UK.02

Part Number	D2020UK.02
Manufacturer	Seme LAB
Description	METAL GATE RF SILICON FET
Published	Feb 22, 2006
Detailed Description	S a MECHANICAL at DATA .D w w w A e e h U 4 t m o .c TetraFET D2020UK.02 METAL GATE RF SILICON FET N 8 7 6 5 1 2...
Datasheet	D2020UK.02 PDF File

Overview

S a MECHANICAL at DATA .
D w w w A e e h U 4 t m o .
c TetraFET D2020UK.
02 METAL GATE RF SILICON FET N 8 7 6 5 1 2 C B P D 3 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED FEATURES H K L J E F G M • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE SO8 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE • VERY LOW Crss Dim.
A B C D E F G H J K L M N P mm 4.
06 5.
08 1.
27 0.
51 3.
56 4.
06 1.
65 0.
76 0.
51 1.
02 45° 0° 7° 0.
20 2.
18 4.
57 w Tol.
±0.
08 ±0.
08 ±0.
08 ±0.
08 ±0.
08 ±0.
08 ±0.
08 +0.
25 -0.
00 Min.
Max.
Max.
Min.
Max.
±0.
08 Max.
±0.
08 w w Inches 0.
160 0.
200 0.
050 0.
020 0.
140 0.
160 0.
065 0.
030 t a .
D Tol.
±0.
003 ±0.
003 ±0.
003 ±0.
003 ±0.
003 ±0.
003 ±0.
003 +0.
010 -0.
000 Min.
Max.
Max.
Min.
Max.
±0.
003 Max.
±0.
003 S a • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM e h U 4 t e .
c m o APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz 0.
020 0.
040 45° 0° 7° 0.
008 0.
086 0.
180 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc.
Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage* Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
Website: http://www.
semelab.
co.
uk E-mail: sales@semelab.
co.
uk w w w .
D a S a t 30W 65V ±20V 2A –65 to 150°C 200°C e e h U 4 t m o .
c Prelim.
1/00 D2020UK.
02 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 5W VDS = 28V f = 1GHz VDS = 0V VDS = 28V VDS = 28V VGS = –5V f =...

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