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SSF17N60A

Part Number	SSF17N60A
Manufacturer	Fairchild Semiconductor
Description	Advanced Power MOSFET
Published	Feb 27, 2006
Detailed Description	Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Datasheet	SSF17N60A PDF File

Overview

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.
) @ VDS = 600V Lower RDS(ON) : 0.
356 Ω (Typ.
) SSF17N60A BVDSS = 600 V RDS(on) = 0.
45 Ω ID = 9 A TO-3PF 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 oC ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8” from case for 5-seconds 1 O o o Value 600 9 5.
7 68 + _ 30 884 9 10 3.
0 100 0.
8 - 55 to +150 Units V A A V mJ A mJ V/ns W W/ C o O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol R θJC R θ JA Characteristic Junction-to-Case Junction-to-Ambient Typ.
--Max.
1.
25 40 Units o C/W Rev.
B ©1999 Fairchild Semiconductor Corporation SSF17N60A Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min.
Typ.
Max.
Units 600 -2.
0 -----------------0.
72 ------10.
72 330 136 23 26 112 36 128 18 53.
4 --4.
0 100 -100 25 250 0.
45 -380 160 55 60 235 80 166 --nC ns µA Ω Ω pF V V nA N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Test Condition ...

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SSF17N60A Advanced Power MOSFET - Fairchild Semiconductor

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